08:30 am | Opening Session nPV | |
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08:30 am | Opening |
08:45 am | Session 9: IBC Cells | |
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08:45 am | Progress Towards A Low-Cost, Ion Implanted, Interdigitated Back Passivated Contact (IBPC) Solar Cell D. Young, NREL |
09:00 am | Design and Application of Ion-implanted PolySi Passivating Contacts for IBC C-Si Solar Cells G. Yang, Delft University of Technology |
09:15 am | Recombination Behavior of Photolithography-free Back Junction Back Contact Solar Cells with Carrier-selective Polysilicon Junctions for Both Polarities M. Rienäcker, Institute for Solar Energy Research Hamelin (ISFH) |
09:30 am | Litho-Free Large Area Interdigitated Back Contact Silicon Solar Cells With Laser Doped Selective BSF B. Zielinski, KU Leuven, ESAT; imec; |
09:45 am | Optimized Laser Doped Back Surface Field for IBC Solar Cells M. Dahlinger, University of Stuttgart, Institute for photovoltaics |
10:00 am | Corona Field Effect Surface Passivation of n-type IBC Cells R.S. Bonilla, Univeristy of Oxford |
10:15 am | Coffee Break |
10:45 am | Session 10: Heterojunction Cells | |
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10:45 am | High-Efficiency Silicon Heterojunction Solar Cells with Molybdenum Oxide Hole Collector J. Geissbühler, EPFL PVLab |
11:00 am | ITO/SiOx:H Stacks for Silicon Heterojunction Solar Cells S. Herasimenka, Arizona State University |
11:15 am | Oxygen Vacancies in Tungsten Oxide and Their Influence on Tungsten Oxide/Silicon Heterojunction Solar Cells M. Mews, Helmholtz-Zentrum Berlin |
11:30 am | Atomic Layer Deposition of Highly Transparent In2O3:H Window Electrodes for Silicon Heterojunction Solar Cells R. Schropp, Eindhoven University of Technology (TU/e) |
11:45 am | Low T Paste for Preparation of High Efficiency HJT Solar Cells S. Körner, Fraunhofer IKTS |
12:00 pm | Lunch Break |
01:00 pm | Poster Session 3 | |
02:30 pm | Short Coffee Break |
02:45 pm | Session 11: PERT-1 | |
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02:45 pm | Titanium Oxide: a Re-emerging Optical and Passivating Material for Silicon Solar Cells J. Cui, Australian National University |
03:00 pm | Multifunctional Dielectric Layers for the Fabrication of Ultra-Simplified n-PERT c-Si Solar Cells R. Cabal, CEA, LITEN, DTS |
03:15 pm | Simplified Cleaning for 22.5% n-PERT Solar Cells with Rear Epitaxial Emitters I. Kuzma-Filipek, Imec |
03:30 pm | n-Type Polysilicon Passivating Contacts for Industrial Bifacial n-PERT Cells M. Stodolny, ECN Solar Energy |
03:45 pm | Coffee Break |
04:15 pm | Session 12: PERT-2 | |
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04:15 pm | CVD Boron Containing Glasses - an Attractive Diffusion Source for High Quality Emitters and Simplified Processing B. Terheiden, University of Konstanz |
04:30 pm | Boron Emitter Formation by Plasma Immersion Ion Implantation in n-Type PERT Silicon Solar Cells J. Lerat, CEA-INES |
04:45 pm | 21.0%-efficient Screen-printed N-pert Back-junction Silicon Solar Cell with Plasma-deposited Diffusion Source N. Wehmeier, ISFH |
05:00 pm | Double Printing nPERT Cells with Narrow Contact Layers J. Lossen, ISC Konstanz e.V. |
05:15 pm | Extending the Limits of Screen-Printed Metallization of Phosphorus- and Boron-Doped Surfaces S. Werner, Fraunhofer ISE |
05:30 pm | Closing Session |