Thursday Program: combined with Silcon PV (posters at the bottom)


A Distributed Electrical Model for Interdigitated Back Contact Silicon Solar Cells
D. Giaffreda, University of Bologna

Impact of Quantum Confinement Effect on Roles of Amorphous Silicon Layers in Heterojunction Solar Cells
T. Kamioka, Toyota Technological Institute

2D-Modeling of Metallization Losses in P+ Emitters Assuming SCHOTTKY Barriers and Tunneling
L.J. Koduvelikulathu, International Solar Energy Research Center Konstanz

Conceptual Comparison between Standard Si Solar Cells and Back Contacted Cells
A. Ali, Government College University Faisalabad

Accouting for Side Effects in Silicon Heterojunction Simulation
R. Varache, CEA, LITEN, LCP

Rear Contact Pattern Optimization Based on 3D Simulations for IBC Solar Cells with Point-Like Doped Contacts
D. Carrio, Universitat Politecnica de Catalunya

Analysis of the Impact of Doping Levels on Performance of Back Contact - Back Junction Solar Cells
P. Procel, DIMES.
Università della Calabria

Exclusively Thermal Donor-doped CZ Wafers for High Efficiency Heterojunction Solar Cells
F. JAY, CEA-Liten National Institute of Solar Energy

Iron-boron Pair Kinetic in Compensated N-Type Silicon
C. Möller, CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH

UMG N-Type CZ-Silicon: Influencing Factors of the Light Induced Degradation and its Suitability for PV Production
J. Broisch, Fraunhofer Institute for Solar Energy Systems ISE

Optimized Texturization and Passivation of Silicon Heterojunction Solar Cells
B. Stegemann, HTW Berlin - University of Applied Sciences

Chemical Treatment for Improved Surface Passivation of Textured Silicon Heterojunction Solar Cells
D. Deligiannis, TU Delft

Boron Implanted, Laser Annealed P+ Emitter for N-Type Interdigitated Back-Contact Solar Cells
X. Yang, Research School of Engineering, The Australian National University

Boron Emitters from Doped PECVD Layers for n-type Crystalline Solar Cells with LCO
J. Engelhardt, Universität Konstanz

Recombination Losses Analysis in Rear Emittter Silicon Heterojunction Solar Cells
R. Varache, CEA, LITEN, LCP

Influence of Interfacial ITO Doping on the Fill Factor of n- and p-type SHJ Solar Cells
M. Bivour, FhG ISE

Etch-back of p+ Structures for Selective Boron Emitters in N-type c-Si Solar Cells
Y. Schiele, University of Konstanz

SHJ Solar Cells Based on a-Si:H/Al¬2O3/ZnO Stacks: Experimental Results and a New Quantitative Analysis of the Band Structure
S. Smit, Eindhoven University of Technology

Single-layer ITO vs ITO/ZNO:AL Layer Stacks in A-SI:H/C-SI Solar Cells: A Comparison
R. Rößler, Helmholtz-Zentrum Berlin

N-Type c-Si Solar Cells based on Laser Processed Dielectric
I. Martin, Departament d'Enginyeria Electònica.
Universitat Politècnica de Catalunya

Selective Emitter Formation on N-type Silicon Wafers by Laser-chemical Processes
D. Linaschke, Fraunhofer IWS Dresden

Potential Advantage of an Industrially Processed Boron Emitter Compared to a Phosphorus Emitter
Y. Komatsu, ECN Solar Energy

Hydrogen Plasma Treatments of Amorphous/Crystalline Silicon Heterojunctions
M. Mews, Helmholtz-Zentrum Berlin

Passivation Properties of Subnanometer Thin Interfacial Silicon Oxide Films
W. Lu, Helmholtz Zentrum Berlin

DC Sputtered ZNO:AL as Alternative TCO in Silicon Heterojunction Solar Cells
K. von Maydell, EWE Forschungszentrum für Energietechnologie e. V. - NEXT ENERGY

Progress in Sputtering of Hydrogenated Amorphous Silicon for Silicon Solar Cells
X. Zhang, Australian National University

Exploration of Metastability of a-Si:H/c-Si Surface Passivation
R. Vasudevan, Delft University of Technology

Black Silicon in Interdigitated Back-contacted Solar Cells
P. Repo, Aalto University

Neutron and X-ray Reflectometry Investigations of Amorphous Silicon-based Surface Passivation Layers
E.S. Marstein, Institute for Energy Technology

Thermal, Structural and Electrical Study of the Effect of Annealing on the Passivation by A-Si of N-type Crystalline(100) Silicon Surfaces
H. Meddeb, Imec

Dielectric Passivation Schemes for High Efficiency N-type C-SI Solar Cells
M. Lamers, ECN Solar Energy

MF-Sputtered AZO for A-SI SHJ Solar Cells
J. Jeurink, Fraunhofer ISE

IBC-HJ Solar Cells with Electroplated Copper Contacts
Y. Ryabchikov, Lyon Institute of Nanotechnologies (INL, INSA de Lyon)

Improvement on Industrial N-type Bifacial Solar Cell with >20.6% Efficiency
H. Chang, Motech

Hard-mask Patterning of Hydrogenated Amorphous Silicon Layers for High Open-Circuit Voltage Back-contacted Silicon Heterojunction Solar Cells
B. Paviet-Salomon, École polytechnique fédérale de Lausanne (EPFL), Photovoltaics and Thin Film Electronics Laboratory

Wafer-thickness Dependence of Double-side Contacted Rear Junction N-type Solar Cells
T. Ballmann, Hanwha Q CELLS GmbH

Bifacial N-Type Silicon Solar Cells Fabricated by Co-diffusion
P. Rothhardt, Fraunhofer ISE

Laser Doped Screen Printed Back Contact Solar Cells Exceeding 21% Efficiency
M. Dahlinger, institute for photovoltaics

Adhesive Modification for Excellent Module-level a-Si:H Passivation of Wafers Bonded to Glass
S.N. Granata, IMEC / KU Leuven

Analyses of Potential-induced Degradation at Interdigitated Back Contact Solar Cells
V. Naumann, Fraunhofer Center for Silicon Photovoltaics CSP