| | Session | Timing | Speaker | Institution | Topic |
| 8:00-9:00 | Reception + badges |
| 9:00-9:15 | Welcome | | Delfina Munoz / Yannick Veschetti | INES/CEA | Welcome+ introduction |
| | Jean Pierre Joly | Director of INES | Global approach |
| 9:30-10:35 | Materials for n-type solar cells
Chair: Jean Pierre Joly & Matthias Hörteis | 9:30-10:00 | Bo Li | MEMC | Cristalline silicon wafers for n-type solar cells |
| 10:00-10:20 | Fiacre Rougieux | ANU | Multi-millisecond n-type Si wafers for high efficiency silicon solar cells: spatial homogeneity and defect engineering |
| 10:20-10:35 | Nora Najid | INES/CEA | Recombination Properties of Oxygen-related Thermal Donors in High Efficiency Czochralski n-type Silicon |
| 10:35-10:50 | Coffee break |
| 10:50-12:15 | Materials for n-type solar cells
Chair: Stefan Glunz & Bo Li | 10:50-11:05 | Etienne Pihan | INES/CEA | High efficiency N-type bifacial solar cells on monolike substrates |
| 11:05-11:20 | Bernhard Michl | ISE | Influence of high temperature processes (including boron diffusion) on the diffusion length of n-type multicrystalline silicon wafers |
| 11:20-11:40 | Matthias Hörteis | Heraeus | Screen-printing pastes for n-type solar cells |
| 11:40-12:00 | Heiko Plagwitz | Oerlikon | Sputtered TCOs for heterojunction cells
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| 12:00-12:15 | Markus König | Heraeus | Advanced model for the contact formation of Al-containing Ag thick film paste on boron-doped emitter of Si solar cells |
| 12:15-13:45 | Lunch |
| 13:45-15:20 | Heterojunction
Chair: Delfina Munoz & Heiko Plagwitz | 13:45-14:15 | Jean Paul Kleider | LGEP-CNRS | Physical insight on heterojunction solar cells from electrical characterization |
| 14:15-14:35 | Andreas Feltrin | Kaneka | Advances in Cu plating for HET cells |
| 14:35-14:50 | Nobutaka Nakamura | Choshu | Advantages of rear emitter in HJ solar cells |
| 14:50-15:05 | Zak Holman | IMT | Infrared light management in Hj solar cells |
| 15:05-15:20 | Thibaut Desrues | INES/CEA | Front & rear side a-Si:H layers development for interdigitated back contact Silicon heterojunction (IBC Si-HJ) solar cells |
| | 15:20-15:35 | Omid Shojaei | Indeotec | New PECVD tool for uniform i, p, n, aSi:H and µc-Si, results and perspectives |
| 15:35-15:50 | Coffee break |
| 15:40-17:00 | Surface passivation & process
Chair: Yannick Veschetti & Joachim John | 15:50-16:10 | Ronald Naber | Tempress | The rising use of thermal oxidation for industrial solar cell production |
| 16:10-16:25 | Bernd Steinhauser | ISE | Firing stable PassDop layer based on doped amorphous SiNx |
| 16:25-16:40 | Robby Peibst | ISFH | Ion implantation for efficient silicon solar cells (presentation 2) |
| 16:40-16:55 | Chanseok Kim | Korea University | Contact properties of BRL on boron emitter in n-type silicon solar cells |
| 16:55-17:10 | Thomas Rachow | ISE | Optimized epitaxial Boron emitters by APCVD |
17:10-18:45 |
Poster session with drinks | OJSC RPE "KVANT" | Solar cells fabricated by combined ion implantation – thermal diffusion procedure using n- and p-Si |
| SEMCO | Study of BCl3 diffusion and passivation of Boron diffused Cz-silicon surfaces |
| ISC | 2D modelling |
| INES/CEA | High efficiency fully implanted n-type PERT |
| SEMCO | Novel chemical mask technologies |
| Toyota Technological Institute | Open circuit voltage and efficiency dependence on the i-aSi:H layer thickness in an aSi:H/cSi hetero-junction solar cell |
| HZB | Approach for a Simplified Fabrication Process for IBC-SHJ Solar Cells |
| ICUBE | Minority and Majority carriers Properties of N-type SILICON RST RIBBON |
| ICUBE | Surface Passivation Schemes For The Front Side And The Rear Side Of N-type Bifacial Solar Cells |
| Social program: Diner on boats across the Bourget Lake |
